发明名称
摘要 A spin-valve thin-film magnetic element includes a substrate, a laminate formed on the substrate, biasing layers, and conductive layers. The laminate includes a free magnetic layer; a first nonmagnetic conductive layer, a first pinned magnetic layer and a first antiferromagnetic layer deposited on the upper surface, away from the substrate, of the free magnetic layer; a second nonmagnetic conductive layer, a second pinned magnetic layer and a second antiferromagnetic layer deposited on the lower surface, near the substrate, of the free magnetic layer. The conductive layers supply a sensing current to the free magnetic layer. The magnetization vectors of the first and second pinned magnetic layers are antiparallel to each other. The first and second antiferromagnetic layers are composed of an alloy comprising Mn and at least one element selected from the group consisting of Pt, Pd, Ir, Rh, Ru, Os, Au, Ag, Cr, Ni, Ne, Ar, Xe and Kr.
申请公布号 JP3212569(B2) 申请公布日期 2001.09.25
申请号 JP19990019119 申请日期 1999.01.27
申请人 发明人
分类号 G11B5/39;C21D1/04;G11B5/31;H01F10/32;H01F41/30;(IPC1-7):G11B5/39 主分类号 G11B5/39
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