发明名称 |
Alignment techniques for epitaxial growth processes |
摘要 |
The specification describes a lithographic technique in which alignment marks are defined in a first semiconductor layer and the alignment marks are then covered with a protective SiO2 layer. After subsequent semiconductor layer growth steps, which selectively deposit on the former semiconductor layer but not on the protective layer, the alignment marks remain undistorted and visible to the exposure tool for subsequent processing.
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申请公布号 |
US6294018(B1) |
申请公布日期 |
2001.09.25 |
申请号 |
US19990396035 |
申请日期 |
1999.09.15 |
申请人 |
LUCENT TECHNOLOGIES |
发明人 |
HAMM ROBERT ALAN;KOPF ROSE FASANO;PINZONE CHRISTOPHER JAMES;RYAN ROBERT WILLIAM;TATE ALARIC |
分类号 |
H01L21/331;H01L23/544;(IPC1-7):C30B25/04 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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