| 摘要 |
PROBLEM TO BE SOLVED: To resolve a problem that high-precise measurement can not be performed caused by a change of an optical property of abrasives with the progress of polishing in polishing, for example, in a Cu process for polishing a Cu layer, in a measuring device for optically measuring a polishing end point or the film thickness in a CMP process for a semiconductor wafer in a manufacturing process for a semiconductor device. SOLUTION: This measuring device is provided with a light source for emitting probe light to a wafer surface during polishing of a wafer, a light detector for receiving a signal light, and a light signal correcting means for correcting the light signal output from the light detector on the basis of the optical data to be changed of abrasives. |
