| 摘要 |
PURPOSE:To provide a semiconductor light emitting element which is proper for a silicon process, etc., by using a substrate which is proper for an integrated circuit such as silicon as a base. CONSTITUTION:A semiconductor light emitting element formed on a silicon substrate 11 is provided with a p-type silicon layer 12 formed on the substrate 11, a p-type porous silicon layer 13 formed by performing an anode etching for a surface of the p-type silicon layer 12 and an n-type GaP layer 14 which is formed on the porous silicon layer 13 and has a forbidden band width which is larger than that of the porous silicon. In the semiconductor light emitting element, light is emitted by injecting a current to a p-n junction of the porous silicon layer 13 and the GaP layer 14. |
