| 摘要 |
An integrated memory is described that differs from conventional memories in that it has second amplifier unit, which are present in addition to first amplifier units that are disposed outside a cell array, for the output signals of a row decoder. The second amplifier units serve for amplifying the decoder signals driven onto the word lines by the first amplifier units and, in contrast to the latter, are disposed within the cell array. Interference caused by crosstalk, for example, on the word lines is suppressed as a result of the second amplifier units that are additionally present.
|
