Method of reducing word line resistance and contact resistance

摘要

By introducing a carefully controlled anneal step after the deposition of tungsten silicide (onto a layer of polysilicon) but before the deposition of a layer of silicon oxide, interaction between the tungsten silicide and a subsequently deposited layer of silicon oxide is greatly reduced or eliminated. This gives good values for the resistance of gate lines formed from the composite as well as for the contact resistance between the polysilicon and the tungsten silicide.