发明名称 |
NEGATIVE ION GENERATING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a negative ion generating method by which the generation of negative ion from a photoelectron releasing material is made from the whole surface of the photoelectron releasing material. SOLUTION: In the method for generating the negative ion by irradiating the photoelectron releasing material 3 disposed at the whole surface of a gas passage with UV rays 2, the irradiation of the UV rays is performed so that the whole surface of the photoelectron releasing material may have a fixed concentration of higher and the irradiation of the UV rays is performed by using plural UV lamps and germicidal lamps may be used for the UV lamps.</p> |
申请公布号 |
JP2001259472(A) |
申请公布日期 |
2001.09.25 |
申请号 |
JP20000079925 |
申请日期 |
2000.03.22 |
申请人 |
EBARA CORP |
发明人 |
FUJII TOSHIAKI;OKUYAMA KIKUO;KAWAGUCHI MITSUO;SUZUKI TSUKURU |
分类号 |
A61L9/22;B01J19/12;B03C3/38;H01T23/00;(IPC1-7):B03C3/38 |
主分类号 |
A61L9/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|