发明名称 NEGATIVE ION GENERATING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a negative ion generating method by which the generation of negative ion from a photoelectron releasing material is made from the whole surface of the photoelectron releasing material. SOLUTION: In the method for generating the negative ion by irradiating the photoelectron releasing material 3 disposed at the whole surface of a gas passage with UV rays 2, the irradiation of the UV rays is performed so that the whole surface of the photoelectron releasing material may have a fixed concentration of higher and the irradiation of the UV rays is performed by using plural UV lamps and germicidal lamps may be used for the UV lamps.</p>
申请公布号 JP2001259472(A) 申请公布日期 2001.09.25
申请号 JP20000079925 申请日期 2000.03.22
申请人 EBARA CORP 发明人 FUJII TOSHIAKI;OKUYAMA KIKUO;KAWAGUCHI MITSUO;SUZUKI TSUKURU
分类号 A61L9/22;B01J19/12;B03C3/38;H01T23/00;(IPC1-7):B03C3/38 主分类号 A61L9/22
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