| 摘要 |
1332994 Semi-conductor devices MULLARD Ltd 11 Jan 1971 1193/71 Heading H1K In a method of diffusing an impurity from the vapour phase into semi-conductor wafers 1, the wafers and impurity source 9 are placed in separate vessels 3, 8, each with an open end, and introduced separately into a diffusion furnace 5, the wafers containing vessel 3 being heated to the diffusion temperature prior to the vessels being brought together so that their open ends abut, forming a substantially closed container while diffusion takes place. The impurity contaning vessel 8 may be similarly heated to the diffusion temperature prior to the abutment of the vessels. A gas flow 6 may be maintained in the furnace, the semi-conductor containing vessel 3 being inserted in opposition to the gas flow and being flushed prior to heating. The wafers may be of silicon, and the impurity source boron nitride or phosphorus nitride. Very shallow diffusions having high resistivity may be achieved.
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