| 摘要 |
<p>PROBLEM TO BE SOLVED: To securely prevent a thin-film transistor from receiving the adverse effects due to static electricity generated in array substrate production of a liquid crystal device. SOLUTION: These are provided on an array substrate a first short-circuit part 1 for the dielectric breakdown protection, where a source layer 62 electrically connected with a source line 4 is laminated on a gate layer 61 which is electrically connected with a gate line 6 and a second short-circuit part 2 for the dielectric breakdown protection, where a drain layer 64 connected electrically with a drain electrode 35 of the thin-film transistor 5 is laminated on the gate layer 61, electrically connected with the gate line 6. A disconnection part 3 is provided, with which the electrical connection of the first short-circuit part 1 for the dielectric breakdown protection with a thin-film transistor 5 and the electrical connection of the second short-circuit part 2 for the dielectric breakdown protection with the second thin-film transistor 5 are disconnected, as necessary.</p> |
