| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of a parasitic transistor due to bird's beak. SOLUTION: In an SOI-type semiconductor device, a semiconductor thin-film part (21) in a bird's beak lower part is formed to an oxide film by growth of an embedded oxide film and an outer edge of an element-forming region is made not to exist in a lower part of a bird's beak (4a) by embedding the lower part of the bird's beak (4a) by an insulation member for preventing a semiconductor thin film (3), where an element is formed from getting into a lower part of the bird's beak (4a) in the outer edge of the isolation region (4) by means of field oxidation.
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