METHOD OF PROCESSING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor wafer in which an environmental pollutant is not generated and an environmental load is small. SOLUTION: A semiconductor wafer in which a protective film is formed on a circuit forming face is picked up from a wafer storing section 2 by a wafer transfer section 3. After being positioned by a pre-center section 5, the wafer is mechanically ground in a grinding section 6 so as to have the thickness of the target thickness of thin processing plus a dry etching margin. After being ground, the semiconductor wafer is washed with a washing solution to remove a contamination in a wafer washing section 10, and then is sent to plasma treating sections 4A and 4B to be dry-etched by a plasma etching. In this way, the generation of the environmental pollutant can be prevented when wet etching is performed by using the etching solution and the method of processing a semiconductor wafer with a small environmental load can be realized.