| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin-film semiconductor device where semiconductor characteristics are improved, productivity is increased, and process temperature is set low. SOLUTION: When a semiconductor film and a thin-film semiconductor device are manufactured by a simple low-temperature process to increase quality, a channel-part semiconductor film is deposited by using an 1PCND device where effective exhaust speed in a reaction chamber is set to 10 SCCM/mtorr or more, or pressure in the reaction chamber becomes 10-5 Torr or less within 10 minutes after the steady operation of a vacuum exhaust device is started.
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