INFRARED RAY DETECTION ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide the infrared ray detection element of high sensitivity by a simple manufacture process by using perovskite-type Mn oxide thin film whose resistance temperature coefficient is higher than a conventional case. SOLUTION: A wiring layer laminated on a part of a SiO2 layer which is laminated on a Si substrate via a gap part is provided with, an electrode layer constituted of plural layers which are laminated by straddling a part of the wiring layer and a part of the SiO2 layer and which have at least iridium layers and a bolometer thin film, which is laminated by straddling a part of the electrode layer and a part of the SiO2 layer and is mainly constituted of provskite- type manganese oxide.