| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can greatly improve the performance of a semiconductor device in which silicon carbide is used, and to provide a manufacturing method thereof. SOLUTION: A semiconductor device, where silicon carbide is used, is manufactured by using crystalline polymorphism silicon carbide which differs with a substrate part and a channel part. The crystalline polymorphism of a substrate part is made a 4H type or 6H type and the crystalline polymorphism of a channel part is made as any of 6H type, 3C type and 15R type. In the process for forming a channel part, a part of first crystalline polymorphic silicon carbide is etched and second crystalline polymorphic silicon carbide is formed in the entire or a part of the etched place and the conductivity type of first and second crystalline polymorphic silicon carbide is controlled for forming a desired semiconductor device. |
