SOLID-STATE IMAGE PICK-UP DEVICE, MANUFACTURING METHOD AND EXPOSURE CONTROL METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an image pick-up device of back irradiation type which enables an electronic shutter function and a vertical type overflow drain structure to discharge to the rear side. SOLUTION: This image pick-up device is provided a high-resistance semiconductor layer 21 of such a level where the whole surface is depleted, image pick-up devices formed on one side of the high-resistance semiconductor layer 21, a second conductivity-type layer 23, the first conductivity-type layer 24 and a transparent electrode 25, which are formed in this order, on the rear surface of the high-resistance semiconductor layer 21.