发明名称 METHOD AND DEVICE FOR ANALYZING FOREIGN MATTER, AND METHOD FOR ANALYZING
摘要 <p>PROBLEM TO BE SOLVED: To provide a device and a method for analyzing foreign matters capable of specifying a process where foreign matters actually generate, accumu lated on a product manufactured through a plurality of processes such electric circuit devices as a display device like a TFT, CCD, electric circuit substrate, and semiconductor device. SOLUTION: A sample is mounted in a vacuum chamber. A stage is driven on a basis of a foreign matter coordinate determined in a foreign matter inspecting process in advance to observe the foreign matter by a charged beam. The foreign matter is peeled by using a probe equipped in the vacuum chamber and a substance on a peeled part of the sample is specified to determine the actual foreign matter generating process.</p>
申请公布号 JP2001255292(A) 申请公布日期 2001.09.21
申请号 JP20000068592 申请日期 2000.03.08
申请人 HITACHI LTD 发明人 HAMAMURA YUICHI;IWATA HISAFUMI;NEMOTO KAZUNORI;KANEMITSU KENJI;WATANABE KENJI;SUGIMOTO ARITOSHI;UMEMURA KAORU;KOIKE HIDEMI
分类号 G01N23/225;G01N23/227;H01L21/66;(IPC1-7):G01N23/225 主分类号 G01N23/225
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