发明名称 |
METHOD AND DEVICE FOR ANALYZING FOREIGN MATTER, AND METHOD FOR ANALYZING |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a device and a method for analyzing foreign matters capable of specifying a process where foreign matters actually generate, accumu lated on a product manufactured through a plurality of processes such electric circuit devices as a display device like a TFT, CCD, electric circuit substrate, and semiconductor device. SOLUTION: A sample is mounted in a vacuum chamber. A stage is driven on a basis of a foreign matter coordinate determined in a foreign matter inspecting process in advance to observe the foreign matter by a charged beam. The foreign matter is peeled by using a probe equipped in the vacuum chamber and a substance on a peeled part of the sample is specified to determine the actual foreign matter generating process.</p> |
申请公布号 |
JP2001255292(A) |
申请公布日期 |
2001.09.21 |
申请号 |
JP20000068592 |
申请日期 |
2000.03.08 |
申请人 |
HITACHI LTD |
发明人 |
HAMAMURA YUICHI;IWATA HISAFUMI;NEMOTO KAZUNORI;KANEMITSU KENJI;WATANABE KENJI;SUGIMOTO ARITOSHI;UMEMURA KAORU;KOIKE HIDEMI |
分类号 |
G01N23/225;G01N23/227;H01L21/66;(IPC1-7):G01N23/225 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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