| 摘要 |
PROBLEM TO BE SOLVED: To distinguish particles, pattern losses, or the like by making clear the contract of scratches with specific depth in the scratches that are formed in the CMP polishing of an insulating film, and to easily detect the scratches also in optical microscopes, optical measuring instruments, or the like. SOLUTION: In a sample having structure where silicon oxide, silicon nitride, and silicon oxide films are laminated from a lower layer on a silicon substrate for forming, CMP polishing is made to allow the remaining film of the silicon oxide film of the uppermost layer. After that, treatment is carried out by the etchant of selective etching of the silicon nitride film. Only the nitride film of a scratch part with depth going through the remaining film layer of the silicon oxide film is selectively etched, and only the scratch with the depth being equal to or more than the remaining film of the silicon oxide film becomes apparent.
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