| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for machining a semiconductor water that increases the transverse rupture strength of a semiconductor wafer for preventing damage, and improves a machining yield. SOLUTION: In machining where the semiconductor wafer is thinned to target thickness, a polishing part 6, a wafer-washing part 10, and plasma treatment parts 4A and 4B are provided. The polishing part 6 polishes a side opposite to the circuit formation surface of the semiconductor wafer. The wafer- washing part 10 washes the semiconductor wafer after polishing. The plasma treatment parts 4A and 4B allow the semiconductor wafer after washing to be subjected to dry etching by plasma treatment. Also, a wafer-carrying-out part 9B and a wafer conveyance part 3 are provided. The wafer-carrying-out part 9B transfers the semiconductor wafer after polishing to the wafer-washing part 10, and the wafer conveyance part 3 transfers the semiconductor wafer after washing to the plasma treatment parts 4A and 4B, thus separately performing conveyance before/after washing, hence preventing foreign objects from adhering to the semiconductor wafer after washing for positively carrying out dry etching, and hence improving the transverse rupture strength of the semiconductor wafer. |
