发明名称 ACTIVE MATRIX SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a reflection type active matrix substrate, having the satisfactory diffuse reflection characteristic and its manufacturing method, without complicating the manufacturing process of the active matrix substrate. SOLUTION: In the manufacturing method of the active matrix substrate, an active element and address wiring having at least one first insulating film are provided on an insulating substrate, a second insulating film is provided, so as to cover the active element and the address wiring, and a pixel electrode connected with the active element through the first opening part is disposed in a matrix form on the second insulating film. The etching rate of the second insulating film is set higher than the etching rate of the first insulating film for conductive etching, a mortar-like recessed and projecting part is provided and a third insulating film is provided, which covers the substrate surface having the recessed and projecting part and has a second opening part for connecting the pixel electrode with the active element.</p>
申请公布号 JP2001255556(A) 申请公布日期 2001.09.21
申请号 JP20000066859 申请日期 2000.03.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAMURA TATSUHIKO
分类号 G02F1/1333;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/3205;H01L23/52;H01L29/786;(IPC1-7):G02F1/136;H01L21/320;G02F1/133 主分类号 G02F1/1333
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