发明名称 |
CERAMIC SUBSTRATE FOR SEMICONDUCTOR MANUFACTURING AND CHECKING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a ceramic substrate for a semiconductor manufacturing and checking device which hardly generates degradation caused by oxidation and has no dropout of a conductor wire or no variation of a resistance value even if used at a high temperature of >=200 deg.C. SOLUTION: A conductor made of one or two circuit(s) is formed on a surface or inside a ceramic substrate for a semiconductor manufacturing and checking device. The ceramic substrate for a semiconductor manufacturing and checking device has features of the conductor being electrically connected with a conductor wire and a part at least of the connecting portion and the conductor wire being covered with non-oxide metal.
|
申请公布号 |
JP2001257196(A) |
申请公布日期 |
2001.09.21 |
申请号 |
JP20000065263 |
申请日期 |
2000.03.09 |
申请人 |
IBIDEN CO LTD |
发明人 |
HIRAMATSU YASUJI;ITO YASUTAKA |
分类号 |
H05B3/20;H01L21/302;H01L21/3065;H01L21/66;H05B3/02;(IPC1-7):H01L21/306 |
主分类号 |
H05B3/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|