| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize a large current of an IGBT element by restraining the action of a parasitic thyristor in a lateral element part. SOLUTION: In an IGBT, an N--type epitaxial layer 3 is formed on a P+-type silicon substrate 1 via an N+-type silicon layer 2, and a P-type impurity diffusion region 4 and an N+-type impurity diffusion region 5 are formed in the surface layer part of the epitaxial layer 3. In a region Z2 of an LDMOS, which is different from a formation region Z1 of an IGBT inside a chip, a P-type well region 13 and an N+-type impurity diffusion regions 14, 15 are formed in a surface layer part of the epitaxial layer 3. The N+-type silicon layer 2 is formed over the entire formation region Z2 of a lateral element and is formed selectively in the formation region Z1 of an IGBT.
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