发明名称 METHOD OF MANUFACTURING MONOLITHIC IC
摘要 PROBLEM TO BE SOLVED: To provide a low-cost and high-performance monolithic IC by combining a desired active device and a desired wiring process, with designers working as a core. SOLUTION: Each of function circuit specifications 101 is determined, taking a specified device characteristic specification 100 into consideration, and then an active device process 120 and a wiring process 121 are selected to determine a circuit design 103. Whether the designed circuit configuration satisfies the function circuit specification 101 is determined. The circuit design 103 processes are repeated, until a desired characteristic is obtained. Thereafter, an actual circuit pattern is designed 104. A photo mask 105, required for a device process 122 and a wiring process 123, is prepared and then an IC is manufactured by the device process 122 and wiring process 123 to manufacture a monolithic IC on a semiconductor substrate. Thereafter, an on-wafer evaluation 107 is executed and the chip is assembled on a mount substrate 108 and a test and an evaluation are re-executed 109. The monolithic IC is completed (and delivered) 111 after making a reliability evaluation 110.
申请公布号 JP2001257313(A) 申请公布日期 2001.09.21
申请号 JP20000066978 申请日期 2000.03.10
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KAMOGAWA KENJI;NISHIKAWA KENJIRO;NAKAGAWA TADAO
分类号 G06F17/50;H01L21/82;H01L21/822;H01L27/04;(IPC1-7):H01L27/04 主分类号 G06F17/50
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