SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of forming a CMOSFET for analog- digital hybrid LSIs with suppressed element characteristics. SOLUTION: The thickness of a first polycrystalline silicon film 7 constituting lower layer electrodes 4a of capacitance elements Cs and resistors 4b of resistance elements Rs is made approximately equal to or less than the height difference (d) between the upside of a silicon oxide film 3 buried in trenches 2 constituting shallow trench isolations and the surface of a semiconductor substrate 1 at active regions. This smoothes the surface irregularities of a second layer polycrystalline silicon film 8 deposited on the upper layer of the first layer polysilicon film 7.