| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which the crystallinity improvement effect of a semiconductor element including a group-III-V mixed crystal semiconductor layer containing nitrogen can easily be obtained, a crystalline semiconductor of high quality which uses the manufacturing method, and an optical system which uses the semiconductor element. SOLUTION: The semiconductor element has the group-III-V mixed crystal semiconductor layer (GaInNAs) 105 composed of a group-III element, N, and other >=1 kind of group-V element, and an upper semiconductor layer (clad layer 107) composed of one or more layers grown thereupon. The manufacturers method thereof is provided with a stage for raising the temperature to a temperature (e.g. 700 deg.C) higher than the growth temperature (e.g. 550 deg.C) of the group- III-V mixed crystal semiconductor layer between the point of time when the growth of the group-III-V mixed crystal semiconductor layer 105 ends and the point of time when the growth of the upper semiconductor layer 107 ends. This period includes the period before the upper semiconductor layer 107 formed by being doped with at least impurities begins to be grown. |
