发明名称 HIGH FREQUENCY POWER AMPLIFIER AND COMMUNICATION EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To realize efficient operation through RF output in a wide range by varying the collector bias voltage of a transistor for amplification in a high frequency power amplifier using a heterojunction bipolar transistor. SOLUTION: This invention is provided with a detector 24 for detecting the collector output power (which can be base input power) of an amplifying transistor 21 and a DC/DC converter 25 for varying the collector voltage of the transistor 21 in proportion to the detected power to control DC power to be consumed by the transistor 21. Furthermore, a resistor 23 for the base bias of the transistor 21 is connected to the converter 25 to link base bias control with the control of the converter 25.
申请公布号 JP2001257540(A) 申请公布日期 2001.09.21
申请号 JP20000068537 申请日期 2000.03.13
申请人 FUJITSU QUANTUM DEVICES LTD 发明人 MIYAZAWA NAOYUKI
分类号 H03F1/30;H03F1/02;H03F3/19;H03F3/21;H03G3/30;(IPC1-7):H03F1/02 主分类号 H03F1/30
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