发明名称 |
HIGH FREQUENCY POWER AMPLIFIER AND COMMUNICATION EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To realize efficient operation through RF output in a wide range by varying the collector bias voltage of a transistor for amplification in a high frequency power amplifier using a heterojunction bipolar transistor. SOLUTION: This invention is provided with a detector 24 for detecting the collector output power (which can be base input power) of an amplifying transistor 21 and a DC/DC converter 25 for varying the collector voltage of the transistor 21 in proportion to the detected power to control DC power to be consumed by the transistor 21. Furthermore, a resistor 23 for the base bias of the transistor 21 is connected to the converter 25 to link base bias control with the control of the converter 25.
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申请公布号 |
JP2001257540(A) |
申请公布日期 |
2001.09.21 |
申请号 |
JP20000068537 |
申请日期 |
2000.03.13 |
申请人 |
FUJITSU QUANTUM DEVICES LTD |
发明人 |
MIYAZAWA NAOYUKI |
分类号 |
H03F1/30;H03F1/02;H03F3/19;H03F3/21;H03G3/30;(IPC1-7):H03F1/02 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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