METHOD OF THERMAL PROCESS FOR RECOVERING DAMAGE AFTER IMPLANTING IONS

摘要

PURPOSE: A method of a thermal process for recovering a damage after implanting ions is provided to remove a damage of a wafer due to ions of a high energy by performing a thermal process of low temperature and a thermal process of high temperature. CONSTITUTION: An ion source of a high energy is implanted into a wafer.(10) A thermal process of low temperature is performed to extract oxygen from the wafer and lower a density of oxygen.(20) The thermal process of low temperature is performed during 3 to 6 hours under a temperature of 650 to 750 degrees centigrade. A thermal process of high temperature is performed to remove a damage of the wafer due to the ion implantation of the high energy.(30) The thermal process of high temperature is performed under a temperature of 900 to 1050 degrees centigrade.