| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device, which enables reduction that controls the increase of dark current and has a discharging part with dispersed heights of barriers controlled, and to provide a manufacturing method of the solid image pickup device. SOLUTION: This solid-state image pickup device has the first insulating films (20 and 21) on the upper layer of a semiconductor substrate 10 of the first conductivity-type (p-type) on which the first semiconductor layer 22 of the second conductivity-type (n-type) is formed, and the first opening C1 is formed in the first insulating films (20 and 21), so that the semiconductor substrate 10 is exposed at the discharging area. The first opening C1 has the second insulating films (22a and 23a), constituting the second opening C2 which is narrower is diameter that the first opening C1 on the inner wall surface. The surface part of the first semiconductor layer 11 at the bottom part of the second insulating films (22a and 23a) turns into the second semiconductor layer 17 of the first conductor type (p-type), and the surface part of the first semiconductor layer 11 at the second opening 2 into the third semiconductor layer 18 of the second conductor type (n-type).
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