| 摘要 |
PROBLEM TO BE SOLVED: To improve the shape of a contact hole and simplify burying a metal. SOLUTION: After patterning a photo resist 3 in the form of contact holes on a silicon oxide film 2, fine contact holes are formed using a mixed gas of C5F8, Ar and o2, the resist 3 is removed by ashing, and water vapor is introduced at a fixed flow rate in an etching chamber to react water vapor with fluorine remaining on the contact hole tops to form hydrofluoric acid, resulting in that the eaves 5 of the contact hole tops are wet etched to broadening the openings, thereby facilitating a metal burying process.
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