| 摘要 |
PROBLEM TO BE SOLVED: To rapidly increase and decrease temperature without breaking an electrical heating element, to prevent a substrate from being contaminated by metal resulting from the electrical heating element, and to simplify the temperature control of a reactor. SOLUTION: In this semiconductor manufacturing device is equipped with a reaction pipe 31 that accommodates a plurality of substrates 6, and is subjected to a given treatment, and heating means 57 and 73 that heat the inside of the reaction pipe. The heating means have heat generation plates 57 and 73 that generate heat by allowing current to flow, and the heat generation plates are arranged while the periphery of the reaction pipe is surrounded.
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