| 摘要 |
PROBLEM TO BE SOLVED: To secure a sufficient lithography margin and the thickness of a film which is used as a mask in the dry etching. SOLUTION: After a second resist film 13 is formed on a first resist film 12, the film 13 is patterned. Then the patterned resist film 13 is covered by forming an SOG film 14 on the whole surface of the first resist film 12. After the resist film 13 is covered, the film 14 and first resist film 12 are patterned by removing the film 14 and resist films 13 and 12 by dry etching. Finally, grooves are formed by using the patterned first resist film 12 as a mask. |
