| 摘要 |
PROBLEM TO BE SOLVED: To improve a wafer substrate cleaning technique. SOLUTION: In a method of manufacturing semiconductor device, a wafer substrate 11 is cleaned after a resist on the substrate 11 is developed by discharging a developing solution onto the substrate 11 by successively performing first cleaning using pure water set at, for example, an ordinary temperature and, successively, second cleaning using warm pure water set at, for example, a temperature between 40 deg.C and 70 deg.C on the substrate 11. |
