| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine resist pattern forming method and device which is capable of forming a fine resist patter having a high aspect ratio without causing collapse and deformation and by which formed resist residue can be removed. SOLUTION: A resist pattern which is larger than the desired resist pattern by a prescribed size is formed on a substrate and corroded by exposure to an atmosphere of gaseous ozone in such a way that the resist pattern is made smaller by the prescribed size to obtain the desired fine resist pattern. The exposure step includes a step for removing resist residue which remains in association with the resist pattern, whereby the resist residue is removed. |
