METHOD FOR MEASURIG FINE PARTICLE ON SILICON WAFER SURFACE

摘要

PROBLEM TO BE SOLVED: To measure fine particles that are less than the detection lower-limit value by a particle counter without nearly being affected by surface haze, and to measure only fine particles by the particle counter with a detection lower- limit value of 0.08 or 0.065μm. SOLUTION: After a silicon single crystal layer of 1μm or more is subjected to epitaxial growth on the surface of a mirror-surface silicon wafer or an epitaxial one for forming, the state of scattered defects on the surface of the mirror-surface silicon wafer or the epitaxial wafer is measured.