| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SIMOX substrate and an SIMOX substrate manufactured using this method, which relaxes restrictions in the conventional type ITOX and reduces lead defects of an embedded oxide layer to manufacture a higher quality SIMOX substrate in heat treating conditions, in the SIMOX substrate manufacturing method. SOLUTION: In the SIMOX substrate manufacturing method, which implants oxygen ions in a silicon signal crystal substrate and heat treats at high temperatures, to form an embedded oxide layer and a surface single-crystal silicon layer, the former stage of the high temperature heat treatment is conducted at temperatures over 1,150 deg.C and lower than the melting point of single crystal silicon in an inert gas atmosphere, to which oxygen is added at a partial pressure of lower than 1%, at least a part of the latter stage of the high temperature heat treatment is executed at temperatures higher than 1,150 deg.C and lower than the melting point of single crystal silicon with the oxygen partial pressure elevated within a range, in which no internal oxidation occurs in the buried oxide layer.
|
