发明名称 |
ETCHING APPARATUS AND ETCHING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To perform fine processing on a transparent conductive film such as an indium tin oxide film(ITO film) by a wet method without causing to generate a residue. SOLUTION: An etching apparatus for etching a substrate is provided with a first etching treating tank having a first chemical liquid treating tank 11, a first washing treating tank 12 and a first drying treating tank 13, and a second etching treating tank having a second chemical liquid treating tank 14, a second washing treating tank 15, and a second drying treating tank 16. The second etching treating tank etches the substrate which is dried in the first drying treating tank 13 in the first etching treating tank.
|
申请公布号 |
JP2001257192(A) |
申请公布日期 |
2001.09.21 |
申请号 |
JP20000068382 |
申请日期 |
2000.03.13 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
IWASAKI KATSUO;HAKODA SHUZO |
分类号 |
G02F1/1343;H01L21/306;H01L21/308;(IPC1-7):H01L21/306 |
主分类号 |
G02F1/1343 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|