发明名称 ETCHING APPARATUS AND ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To perform fine processing on a transparent conductive film such as an indium tin oxide film(ITO film) by a wet method without causing to generate a residue. SOLUTION: An etching apparatus for etching a substrate is provided with a first etching treating tank having a first chemical liquid treating tank 11, a first washing treating tank 12 and a first drying treating tank 13, and a second etching treating tank having a second chemical liquid treating tank 14, a second washing treating tank 15, and a second drying treating tank 16. The second etching treating tank etches the substrate which is dried in the first drying treating tank 13 in the first etching treating tank.
申请公布号 JP2001257192(A) 申请公布日期 2001.09.21
申请号 JP20000068382 申请日期 2000.03.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IWASAKI KATSUO;HAKODA SHUZO
分类号 G02F1/1343;H01L21/306;H01L21/308;(IPC1-7):H01L21/306 主分类号 G02F1/1343
代理机构 代理人
主权项
地址