| 发明名称 |
THERMAL SEMICONDUCTOR INFRARED IMAGE PICKUP ELEMENT |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal semiconductor infrared image pickup element having high sensitivity and high response speed. SOLUTION: The base and the side of the active region 104 of a thermosensitive element part 101 are constituted of heavily-doped p-type areas 105 and 106. At least the upper face of the thermosensitive element part 101 is covered with silicon dioxide.
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| 申请公布号 |
JP2001257382(A) |
申请公布日期 |
2001.09.21 |
| 申请号 |
JP20000069186 |
申请日期 |
2000.03.13 |
| 申请人 |
TOSHIBA CORP |
发明人 |
SHIGENAKA KEITARO;IIDA YOSHINORI |
| 分类号 |
G01J1/02;G01J5/02;G01J5/20;G01J5/28;G01J5/48;H01L31/10;H01L35/00;H04N5/33;H04N5/335;H04N5/369;(IPC1-7):H01L35/00 |
主分类号 |
G01J1/02 |
| 代理机构 |
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代理人 |
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