| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory in which secure operation for decline of a power source during operation can be ensured. SOLUTION: A memory cell array 1 is divided into plural blocks BLKi. A boosting power source circuit 7 generating drive voltage required for memory operation is provided for each block of the memory cell array 1, and a boosting power source switch SWi holding 'on' at the time of normal memory operation is provided between a power source line 8 connected to an external power source terminal and a power source supply terminal of each boosting power source circuit 7. The memory is also provided with a switch control circuit 10 turning off the boosting power source switch SWi corresponding to the other blocks excluding a voltage detecting circuit 9 detecting decline of a voltage level of the power source line 8 and a block in which the memory cell array 1 is selected by an output of this voltage detecting circuit 9.
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