| 摘要 |
PURPOSE: A semiconductor device comprising an information storing circuit is provided to stabilize an input voltage in a structure using a PMOS transistor and an NMOS transistor. CONSTITUTION: The semiconductor device comprises a product information storing circuit(100), a pad(200), a control circuit(400) and a mode register set circuit(MRS)(500). The product information storing circuit comprises a fuse(F10) and a plurality of NMOS transistors(MN10,MN20,MN30,MN40,MN50). One end of the fuse is connected to a ground(Vss) terminal and another end of the fuse is connected to the pad through the above NMOS transistors. Each of the NMOS transistors(MN10,MN20,MN30,MN40) has a gate connected with a drain and acts as a diode. The NMOS transistor(MN50) connects the other NMOS transistors with the fuse and is turned on/off in response to an output signal of the control circuit. The control circuit does not operate during a normal operation, and generates a signal(MRSEN) to control the NMOS transistor(MN50) in response to an output signal of the MRS during a test operation. A PMOS transistor(MP10) and an NMOS transistor(MN60) are for stabilizing an input, and the PMOS transistor has a current path formed between a power supply terminal(Vdd) and the pad and a gate connected to the pad. The NMOS transistor(MN60) has a current path formed between the ground terminal and the pad and a gate connected to the pad.
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