发明名称 |
Semiconductor device having ferroelectric capacitor and method for manufacturing the same |
摘要 |
There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
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申请公布号 |
US2001022372(A1) |
申请公布日期 |
2001.09.20 |
申请号 |
US20010801920 |
申请日期 |
2001.03.09 |
申请人 |
KANAYA HIROYUKI;TANIGUCHI YASUYUKI;OZAKI TOHRU;KUMURA YOSHINORI |
发明人 |
KANAYA HIROYUKI;TANIGUCHI YASUYUKI;OZAKI TOHRU;KUMURA YOSHINORI |
分类号 |
H01L21/02;H01L21/311;H01L21/3213;H01L21/8246;H01L27/115;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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