发明名称 |
MEMORY CELL, METHOD OF FORMATION, AND OPERATION |
摘要 |
A memory cell (101), its method of formation, and operation are disclosed. In accordance with one embodiment, the memory cell (101) comprises a first and second current carrying electrode (12), a control electrode (19), and doped discontinuous storage elements (17). In accordance with an alternative embodiment, memory cell programming is accomplished by removing or adding an average of approximately at least a first charge (30, 62, 64), which can be electron(s) or hole(s) from each of the doped discontinuous storage elements (17).
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申请公布号 |
WO0169607(A2) |
申请公布日期 |
2001.09.20 |
申请号 |
WO2001US06842 |
申请日期 |
2001.03.02 |
申请人 |
MOTOROLA, INC. |
发明人 |
MURALIDHAR, RAMACHANDRAN;MADHUKAR, SUCHARITA;JIANG, BO;WHITE, BRUCE, E.;SAMAVEDAM, SRIKANTH, B.;O'MEARA, DAVID, L.;SADD, MICHAEL, ALAN |
分类号 |
H01L21/8247;G11C11/56;G11C16/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/56 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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