| 发明名称 |
Shallow trench isolation formation with sidewall spacer |
| 摘要 |
An isolation structure which protrudes above the semiconductor surface and sidewall spacers which smooth the topography over said isolation structure.
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| 申请公布号 |
US2001022383(A1) |
申请公布日期 |
2001.09.20 |
| 申请号 |
US20010847202 |
申请日期 |
2001.05.01 |
| 申请人 |
KURODA SHIGERU;OKUNO YASUTOSHI;NUMATA KEN |
发明人 |
KURODA SHIGERU;OKUNO YASUTOSHI;NUMATA KEN |
| 分类号 |
H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
| 代理机构 |
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| 地址 |
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