发明名称 Electrical and thermal contact for use in semiconductor devices
摘要 An electrical and thermal contact which includes an intermediate conductive layer, an insulator component, and a contact layer. The insulator component is fabricated from a thermally insulative material and may be sandwiched between the intermediate conductive layer and the contact layer. The electrical and thermal contact may be fabricated by forming a first thin layer on a surface of the semiconductor device, depositing a dielectric layer adjacent the first thin layer, patterning the dielectric layer to define the insulator component, forming a second thin layer adjacent the insulator component and in partial contact with the first thin layer. The first and second thin layers are respectively patterned to define the intermediate conductive layer and the contact layer. The electrical and thermal contact effectively contains heat within and prevents heat from dissipating from a contacted structure, such as a phase change component that may be switched between two or more electrical states.
申请公布号 US2001023119(A1) 申请公布日期 2001.09.20
申请号 US20010864697 申请日期 2001.05.23
申请人 REINBERG ALAN R. 发明人 REINBERG ALAN R.
分类号 H01L23/525;H01L45/00;(IPC1-7):H01L21/20;H01L21/336 主分类号 H01L23/525
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