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发明名称
BAR-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF
摘要
Der Steg-Feldeffekttransistor weist ein Substrat auf, einen Steg über dem Substrat, sowie ein Gate und einen Spacer über einem Teil des Stegs.
申请公布号
WO0169686(A1)
申请公布日期
2001.09.20
申请号
WO2001DE00878
申请日期
2001.03.08
申请人
INFINEON TECHNOLOGIES AG;HOFMANN, FRANZ;ROESNER, WOLFGANG;LUYKEN, RICHARD, JOHANNES
发明人
HOFMANN, FRANZ;ROESNER, WOLFGANG;LUYKEN, RICHARD, JOHANNES
分类号
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/786
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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