Optical proximity correction methods, and methods of forming radiation-patterning tools

摘要

The invention encompasses an optical proximity correction method. A substrate is provided which is to be formed into a radiation-patterning tool. A first dataset is provided to define a first radiation masking pattern for a first part of the tool, and a second dataset is provided to define a second radiation masking pattern for a second part of the tool. OPC calculations are performed on the second dataset, and the second dataset is modified based on the calculations. The OPC calculations of the second dataset utilize at least a portion of the first dataset, but do not modify said portion of the first dataset. A pattern supported by the radiation-patterning tool substrate is formed utilizing the modified second dataset. The invention also encompasses a method of forming a radiation patterning tool. At least one DRAM array area of a semiconductive material substrate is defined, and at least one peripheral circuitry area is defined proximate the at least one DRAM array area. A DRAM dataset is provided to define a radiation masking pattern for at least some circuitry in the DRAM array area, and a peripheral circuitry dataset is provided to define a radiation masking pattern for at least some circuitry in the peripheral circuitry area. OPC calculations are performed on the peripheral circuitry dataset, and the peripheral circuitry dataset is modified based on the calculations. The OPC calculations of the peripheral circuitry dataset utilize at least a portion of the DRAM dataset.