发明名称 |
Thin film transistor, and manufacturing method thereof |
摘要 |
The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode 14 and a drain electrode 15 disposed above an insulating substrate 11 at a predetermined interval; an s-Si film 16 disposed in relation to the source electrode 14 and drain electrode 15; a gate insulating film 17 overlapping the a-Si film 16; and a gate electrode 18 overlapping the gate insulating film 17, in which the a-Si film 16 is disposed between the source electrode 14 and the drain electrode 15 and has a floating island portion 20 above which or beneath which the gate electrode 18 is not formed, and boron ions are implanted into this portion to form a boron-ion-implanted region 19.
|
申请公布号 |
US2001022361(A1) |
申请公布日期 |
2001.09.20 |
申请号 |
US20010761030 |
申请日期 |
2001.01.16 |
申请人 |
TSUJIMURA TAKATOSHI;TOKUHIRO OSAMU;MOROOKA MITSUO;MIYAMOTO TAKASHI |
发明人 |
TSUJIMURA TAKATOSHI;TOKUHIRO OSAMU;MOROOKA MITSUO;MIYAMOTO TAKASHI |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20;H01L21/00;H01L21/84 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|