| 发明名称 |
Method for setting the threshold voltage of a MOS transistor |
| 摘要 |
A method for setting the threshold voltage of a MOS transistor having a gate composed of polysilicon includes the step of implanting germanium ions into the gate composed of polysilicon in order to change the work function of the gate.
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| 申请公布号 |
US2001023116(A1) |
申请公布日期 |
2001.09.20 |
| 申请号 |
US20010811799 |
申请日期 |
2001.03.19 |
| 申请人 |
WURZER HELMUT;CURELLO GUISEPPE |
发明人 |
WURZER HELMUT;CURELLO GUISEPPE |
| 分类号 |
H01L21/28;H01L21/8238;H01L27/092;H01L29/49;H01L29/51;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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