| 摘要 |
The present invention is directed to a method of forming source/drain regions (31) in a semiconductor device. In one illustrative embodiment, the method comprises forming a gate stack (17) above a semiconducting substrate (12), forming a recess (24) in said substrate (12) proximate said gate stack (17), and performing an implantation processs (30) to implant dopant atoms into the bottom surface (27) of the recess (24). The method further comprises forming a layer of epitaxial silicon (32) in the recess (24), performing a second ion implantation process (38) to form a doped region (33) in at least the epitaxial silicon (32) in the recess (24), and performing an anneal process to activate the implanted dopant atoms.
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