发明名称 |
LOCALIZED HEATING AND COOLING OF SUBSTRATES |
摘要 |
The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. For instance, in one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperaure control.
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申请公布号 |
WO0169656(A2) |
申请公布日期 |
2001.09.20 |
申请号 |
WO2001IB00392 |
申请日期 |
2001.03.15 |
申请人 |
MATTSON THERMAL PRODUCTS INC. |
发明人 |
TILLMAN, ANDREAS;ZERNICKEL, DIETER;SHOOSHTARIAN, SOHAILA;ACHARYA, NARASIMHA;ELBERT, MIKE |
分类号 |
H01L21/31;H01L21/00;H01L21/26;(IPC1-7):H01L/ |
主分类号 |
H01L21/31 |
代理机构 |
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主权项 |
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地址 |
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