| 摘要 |
<p>An aluminum-silicon carbide (Al-SiC) semiconductor substrate having a metal comprised mainly of aluminum as a first component and silicon carbide as a second component, wherein the second component accounts for 5 to 60 mass % of the whole substrate and the balance is the first component, and the camber in the main surface direction is 3 νm/mm or less; a package having a semiconductor element using the substrate; and a semiconductor device using the substrate. The substrate has excellent thermal properties and also exhibits high dimensional accuracy and is capable of maintaining it stably in practical use, and thus allows the production, at low costs, of semiconductor substrates comprising an aluminum-silicon carbide (Al-SiC) based composite material which can correspond to the rapid diversification of shapes used practically.</p> |
