PENUMBUHAN LAPISAN TIPIS SILIKON AMORF NITRIDA TERHIDROGENASI SEBAGAI INSULATOR PATE PADA THIN FILM TRANSISTOR (TFT) DENGAN TEKNIK PECVD,申请号ID20000000195D-传众专利搜索

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发明名称	PENUMBUHAN LAPISAN TIPIS SILIKON AMORF NITRIDA TERHIDROGENASI SEBAGAI INSULATOR PATE PADA THIN FILM TRANSISTOR (TFT) DENGAN TEKNIK PECVD
摘要
申请公布号	ID29671(A)	申请公布日期	2001.09.20
申请号	ID20000000195D	申请日期	2000.03.15
申请人	INSTITUT TEKNOLOGI BANDUNG	发明人	DR. SUKIRNO;TOTO WINATA PH.D;JASRUDIN D.M.;FITRI S. ARSYAD
分类号		主分类号
代理机构		代理人
主权项
地址

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